| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_3c754156d9ab873a2efe5a3990dbf627 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02P70-50
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-547
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1214 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42332
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-0352
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66825
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66833
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-1804 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-06 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-115
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-14
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-20 |
| filingDate |
2008-01-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_161729ced21fb021cc22c648636a2170
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4a79b304000a24fc860ff90c1c56bb1f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4dc8554400fe1aa3aa4626bb295928d9
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e5dfba2d8dce0c923da3983e9fbe67c0
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a2542a138fd2a199c6001330c75a2061 |
| publicationDate |
2008-08-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-200832516-A |
| titleOfInvention |
Layered structure with silicon nanocrystals, solar cell, nonvolatile memory element, photo sensitive element and fabrications thereof, and method for forming silicon nanocrystals |
| abstract |
The present invention relates to a method for forming a layered structure with silicon nanocrystals. In one embodiment, the method comprises the steps of (i) forming a first conductive layer on a substrate, (ii) forming a silicon-rich dielectric layer on the first conductive layer, and (iii) laser-annealing at least the silicon-rich dielectric layer to induce silicon-rich aggregation to form a plurality of silicon nanocrystals in the silicon-rich dielectric layer. The silicon-rich dielectric layer is one of a silicon-rich oxide film having a refractive index in the range of about 1.47 to 2.5, or a silicon-rich nitride film having a refractive index in the range of about 1.7 to 2.5. The layered structure with silicon nanocrystals in a silicon-rich dielectric layer is usable in a solar cell a photodetector, a touch panel, a non-volatile memory device as storage node, and a liquid crystal display. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I381534-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2022068413-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8344381-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11367494-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I394071-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8772075-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7683309-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I410703-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I458098-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I395034-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8586425-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8362484-B2 |
| priorityDate |
2007-01-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |