| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6b822ee046eb6c45d1e3bd9ce9c1782e |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1285
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B23K2101-006
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1296 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02683
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78675
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02691
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B23K26-066
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B23K26-0626
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02678
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02532
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78696
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66757
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B23K26-0884
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B23K26-0738 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 |
| filingDate |
2007-08-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_75c6267d8c775da162e94c833c3742ac |
| publicationDate |
2008-07-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-200830556-A |
| titleOfInvention |
Thin film transistor, manufacturing method thereof, and semiconductor device |
| abstract |
By a laser crystallization method, a crystalline semiconductor film in which grain boundaries are all in one direction is provided as well as a manufacturing method thereof. In crystallizing a semiconductor film formed over a substrate with linear laser light, a phase-shift mask in which trenches are formed in a stripe form is used. The stripe-form trenches formed in the phase-shift mask are formed so as to make a nearly perpendicular angle with a major axis direction of the linear laser light. CW laser light is used as the laser light, and a scanning direction of the laser light is nearly parallel to a direction of the stripe-form trenches (grooves). By changing luminance of the laser light periodically in the major axis direction, a crystal nucleation position in a semiconductor that is completely melted can be controlled. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11004925-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10854697-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10763322-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10872947-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10879331-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11672148-B2 |
| priorityDate |
2006-08-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |