| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_b5231c81de1a546c1d6a9325c10910ce
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6bd4720aefb28835b9bfc5ff805f891b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_bbe9685e981a469cc12def7ce81c768c |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7833
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-573
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-585
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0203 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8238 |
| filingDate |
2007-09-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8920d7319c5104e5505617ec88445d5f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f778ba6418e148054cff6f378169c6ff
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9aa66235b545f37ef8b5994f44126a84
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c2522c4d859c5dfcd75f72bf4f3d0a8e |
| publicationDate |
2008-07-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-200830465-A |
| titleOfInvention |
Semiconductor chip with improved resistance to reverse engineering |
| abstract |
A technique for and structures for camouflaging an integrated circuit structure and strengthen its resistance to reverse engineering. A plurality of transistors are formed in a semiconductor substrate, at least some of the transistors being of the type having sidewall spacers with LDD regions formed under the sidewall spacers. Transistors are programmably interconnected with ambiguous interconnection features, the ambiguous interconnection features each comprising a channel formed in the semiconductor substrate with preferably the same dopant density as the LDD regions, with selected ones of the channels being formed of a conductivity type supporting electrical communication between interconnected active regions and with other selected ones of the channels being formed of a conductivity type inhibiting electrical communication but ambiguously appearing to a reverse engineer as supporting electrical communication. |
| priorityDate |
2006-09-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |