http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-200830428-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_38ed56a4b4e8e2315b2b3308bffedb3f |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-086 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823807 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823814 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0847 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823892 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7835 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0646 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 |
| filingDate | 2007-08-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f3212e734a6fad6aa8ad185ade50a922 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c223d1ff6338cf2704f7024504a3de71 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_acc9b6c6677633f640c9cba59da94088 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fe0bc3f7399a54bf3996a3803318b5b0 |
| publicationDate | 2008-07-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-200830428-A |
| titleOfInvention | Forming reverse-extension metal-oxide-semiconductor device in standard CMOS flow and method for forming thereof |
| abstract | A metal-oxide-semiconductor device, semiconductor device and a method for forming the same are provided. The semiconductor device includes a gate dielectric over a semiconductor substrate, a gate electrode on the gate dielectric, a lightly doped drain/source (LDD) region in the semiconductor substrate and having a portion extending under the gate the electrode, a deep source/drain region in the semiconductor substrate, and an embedded region enclosed by a top surface of the semiconductor substrate, the LDD region, and the deep source/drain region. The embedded region is of a first conductivity type, and the LDD region and the deep source/drain region are of a second conductivity type opposite the first conductivity type. The embedded region and the LDD region are preferably formed simultaneous1y with the formation of a LDD region and a pocket region of an additional MOS device, respectively. |
| priorityDate | 2006-08-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 31.