http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-200830363-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_44ff3005508304394801e265e503b811 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F1-36 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F1-80 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027 |
| filingDate | 2007-10-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cb327545f4b661dbb26091e731839d63 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_35f1c40ad505e5fe027dac9790bac674 |
| publicationDate | 2008-07-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-200830363-A |
| titleOfInvention | Method of producing a photo mask |
| abstract | In a method of producing a photo mask including the steps of preparing a mask blank in which a light semi-transmitting film and a light-shielding film are successively formed on a light transmitting substrate and patterning the light-shielding film and the light semi-transmitting film, to prevent pattern defects in the light semi-transmitting film and/or the light shielding film resulting from a gas generated by wet etching of the light semi-transparent film. In a method of producing a photo mask including the steps of preparing a mask blank in which a light semi-transparent film and a light-shielding film are successively formed on a light transmitting substrate and patterning the light shielding film and the light semi-transparent film, the light semi-transparent film is made of a material having a function of adjusting the amount of transmission with respect to exposure light and containing metal and silicon. The light-shielding film has a function of shielding the exposure light. The light semi-transparent film is patterned by wet etching using an etching liquid containing at least one fluorine compound selected from hydrofluoric acid, fluorosilicic (hydrofluorosilicic) acid, and ammonium hydrogen fluoride and at least one oxidizing agent selected from hydrogen peroxide, nitric acid and sulfuric acid. In the etching liquid, a molar ratio of the fluorine compound and the oxidizing agent is selected so that the tabove-mentioned pattern defects can be prevented. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I817529-B |
| priorityDate | 2006-10-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 59.