http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-200829687-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_ee1c19da359446fb5c4f0458a57b783d |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B24B37-044 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-304 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09K3-14 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09K3-1463 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31053 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09G1-02 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09K3-14 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B24B37-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-304 |
| filingDate | 2007-09-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0a52c78287772e6465bdc60e7a992b33 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_48cfc2ee567d4bc6deb81e8d5745616b http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8024a1f2fde87772d3d9b7b0158aaadf |
| publicationDate | 2008-07-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-200829687-A |
| titleOfInvention | Polishing agent for semiconductor integrated circuit device, polishing method, and method for manufacturing semiconductor integrated circuit device |
| abstract | The present invention aims to provide a polishing technique which enables to achieve an adequate polishing rate ratio between a borophosphosilicate glass material layer and the other materials when an object surface is polished during production of a semiconductor integrated circuit device, thereby realizing high planarization of the object surface including a borophosphosilicate glass material layer. Specifically disclosed is a polishing agent for chemical mechanical polishing, which contains cerium oxide particles, a water-soluble polyamine, one or more basic compounds selected from the group consisting of monoethanolamine, ethylethanolamine, diethanolamine and ammonia, and water. The pH of the polishing agent is within the range of 10-13, and the basic compounds are contained therein in an amount of more than 0.01% by mass. |
| priorityDate | 2006-09-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 60.