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publicationDate 2008-07-01-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber TW-200828518-A
titleOfInvention Phase change memory cell with thermal barrier and method for fabricating the same
abstract A memory cell has thermal isolation material between a bottom electrode and a plug contact to confine heat in a memory element during programming and reset operation. In a particular embodiment, the memory element is a Chalcogenide, such as GST. An electrically conductive barrier layer deposited over the contact and on sidewalls of a recess formed over the contact electrically couples the bottom electrode to the contact.
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