http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-200826240-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_7d393fda2fe149aac109d606fd08176e |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76897 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B69-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B41-30 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8242 |
| filingDate | 2007-06-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_aa13c8eca7b53e128696a5426a62f11c |
| publicationDate | 2008-06-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-200826240-A |
| titleOfInvention | Self aligned contact |
| abstract | A semiconductor device comprises one or more self aligned contacts. The device may include one or more gate structures adjacent a first doped region. The device may comprise a first dielectric overlaying the gate structure and a first layer comprising silicon and overlaying a top of each said gate structure, the first layer being separated from each said conductive gate by the first dielectric. The first layer having an opening overlying the first doped region, and the first dielectric extends substantially down side portions of the opening. The device includes a first conductive contact having at least a portion extending into the opening, the contact electrically contacting the first doped region at a bottom region of the opening, the contact being insulated each conductive gate of each gate structure adjacent to the contact by the first dielectric. |
| priorityDate | 2006-12-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 28.