http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-200825160-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6cad0e70ded0b8dac0d71884bd16c29c |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09G1-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3212 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09K3-14 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-304 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B24B37-00 |
| filingDate | 2006-12-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f0b2c98edf78615afd450f9885d124f3 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5804207016a0bfa3deb2d348f7b2ed12 |
| publicationDate | 2008-06-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-200825160-A |
| titleOfInvention | Planarization composition |
| abstract | The present invention provides CMP abrasive slurry that is substantially free of aluminum oxide and comprises liquid and solids wherein the solids comprises: (a) in an amount of at least about 90 weight percent based on the solids, at least one non-spherical component having formula Al2O3 * xH2O where x ranges from 1 to 3; and (b) up to about one weight percent based on the solids portion of submicron alpha-alumina. The CMP abrasive slurry may be used to polish metallic or dielectric surfaces in computer wafers. |
| priorityDate | 2005-06-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 72.