http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-200819914-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_fcc0b66123940d1b32783569ebfa2d45 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0274 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-40 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31138 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0397 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-266 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-26513 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-265 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-004 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-027 |
| filingDate | 2007-08-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_02de186886d3adad279a674dcb32553e http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f2d287b722f301584c7f16133516adc1 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fe06fbad1fd7508a680752e9e79d99c3 |
| publicationDate | 2008-05-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-200819914-A |
| titleOfInvention | Method of ion implantation and radiation-sensitive resin composition for use therein |
| abstract | A method of ion implantation that attains thinning of a resist layer through the use of a radiation-sensitive resin composition excelling in ion blocking property and resist shatter resistance even in the form of a thin film; and a radiation-sensitive resin composition for use therein. In the method, first, a resist layer of less than 1.0 μm thickness is formed on a substrate by the use of a radiation-sensitive resin composition containing (A) (meth)acrylic ester resin having an acid dissociative group which becomes alkali-soluble by the dissociation of acid dissociative group, (B) compound capable of generating an acid by exposure to radial rays and (C) phenylated low-molecular compound generating no new acid by exposure to radial rays. The resist layer is subjected to selective exposure and alkali development to thereby form a resist pattern. The resist pattern is masked, and ion implantation is carried out. |
| priorityDate | 2006-08-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 308.