http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-200818514-A

Outgoing Links

Predicate Object
assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_72ed91cb20a3ca510bb7e85d7fae504a
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-76
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-788
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8247
filingDate 2006-10-05-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ebf13ce3d7be1581f3b4dd50a4a3b12a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7df551a893c77b85be645e1d0b915205
publicationDate 2008-04-16-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber TW-200818514-A
titleOfInvention Non-volatile memory with isolation structure and method of manufacturing the same
abstract A method of manufacturing non-volatile memory is described. First, a substrate is provided, wherein plural isolation structures are formed thereon and adjacent two isolation structures define an active region. The top surfaces of these isolation structures are higher than that of the substrate. Then, plural openings are formed in the substrate of each active region. Plural floating gates are formed on the sidewalls of each opening, wherein the top of the floating gate is lower than the surface of the isolation structure but higher than the surface of the substrate. Next, plural source lines are formed on the substrate in the bottom of the opening. The source lines are adjacent to the floating gates and across the isolation structures. And portions of the isolation structures outside the source lines are removed. And plural word lines are formed on the substrate outside the source lines.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10483271-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I669805-B
priorityDate 2006-10-05-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

Incoming Links

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Total number of triples: 18.