| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_38ed56a4b4e8e2315b2b3308bffedb3f |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-165 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66628
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02532
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02529
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02381
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0262
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02639
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7848
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66636 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 |
| filingDate |
2007-04-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c618b1e7d61abaf87b034cfbd217e060
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_37501fe15b3c34eef3d6caf119950143
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ac2d9430a19c4328a3d48c04152f70f6
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_565acad5885fa5b71960e1e208642b50 |
| publicationDate |
2008-04-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-200818334-A |
| titleOfInvention |
Semiconductor fabrication method, method of forming a strained semiconductor structure |
| abstract |
A semiconductor fabrication method, the method comprising: forming a gate electrode formed over a substrate; and forming a recess in the substrate on ether side of the gate electrode; and forming an epitaxial stressor layer in the recess using a reaction mixture having HCl. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I497718-B |
| priorityDate |
2006-10-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |