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filingDate 2007-07-19-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 2008-04-16-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber TW-200818319-A
titleOfInvention Oxide etching method
abstract There is provided an etching method of an amorphous oxide layer containing In and at least one of Ga and Zn, which includes etching the amorphous oxide layer using an etchant containing any one of acetic acid, citric acid, hydrochloric acid, and perchloric acid.
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