| abstract |
A semiconductor device polishing method, comprising continuously polishing, with one polishing liquid, a barrier metal film formed over a surface of a substrate having a concavity or a surface of an interlayer insulating film formed on the substrate, and a copper or copper alloy conducting film formed on a surface of the barrier metal film so as to fill the concavity, wherein the polishing liquid comprises: an amino acid; an oxidant; polishing particles; and a barrier metal film polishing rate adjusting agent represented by the following Formula (I): Formula (I) R1-CH2-SO3H wherein in the Formula (I), R1 represents H, CH3 or NH2. |