http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-200818291-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d80f1040809503e54509c871ba828f75 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31116 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67069 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B05D3-00 |
| filingDate | 2007-06-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_124605f184cacf24d1ec01748a229026 |
| publicationDate | 2008-04-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-200818291-A |
| titleOfInvention | Substrate processing method and substrate processing apparatus |
| abstract | To provide a substrate processing method capable of easily removing a remaining product due to a hydrofluoric acid. An HF gas is supplied to a wafer W having a thermal oxidation film 61 and a BPSG film 63 to selectively etch the BPSG film 63. Subsequently, an NH3 gas is supplied to the wafer W, and allows an H2 SiF6 gas to react to an NH3 gas of the remaining product 64 generated on the basis of the reaction between the SiO2 and the hydrofluoric acid to generate NH4 F and SiF4. Further, the NH4 F is allowed to sublimate. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I609725-B |
| priorityDate | 2006-06-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 29.