http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-200817495-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e4c608a8531ea588aab7e23318e09a77 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09K3-14 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-304 |
| filingDate | 2006-10-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5ae9aea3141bf5fb9147de4d7b45f024 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_96134e69c8e2bf9526ee2b31ca44552d http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e9b5b777bf6a9ef5e74307ba55beccd3 |
| publicationDate | 2008-04-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-200817495-A |
| titleOfInvention | Chemical mechanical polishing slurry for polishing polysilicon |
| abstract | The invention discloses a chemical mechanical polishing slurry for polishing polysilicon. The polishing slurry comprises abrasive particles, water, and one or more polyol type non-ion surface activity. The polishing slurry of the invention is novel chemical mechanical polishing slurry capable of preferably polishing polysilicon under alkaline codition. Furthermore, the polishing slurry can effectively reduce the removal rate of polycrysilicon, adjust the selectivity of polysilicon to silicon dioxide, and improve the planarity efficiency of the polysilicon. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I680167-B |
| priorityDate | 2006-10-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 72.