http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-200816511-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_a5acc73c34cf2b348b8bce69d72b9c37 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-00 |
| filingDate | 2006-09-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_44082c63e75ed22669aec3c4c58b70f9 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_32bfa1d5135293cc46b7c79d602abf49 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_58353c9b25e132cf4f82ac26130d0dae http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a9b302924ac0de1c6361362ab9f57cf4 |
| publicationDate | 2008-04-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-200816511-A |
| titleOfInvention | Method to enhance lightness for p-type nitride group compound LED |
| abstract | The present invention, firstly, the p-type GaN semiconductor layer is provided, then, the different thickness and coverage for titanium metal are coated on the p-type GaN semiconductor layer. Next, the activation process is carried out in the heating tube under the nitrogen gas and quite high temperature, about certain minutes. Finally, The titanium metal is removed after the activation process, therefore the carrier concentration can be selectively changed, in order to enhance lightness for p-type nitride group compound LED. |
| priorityDate | 2006-09-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 28.