http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-200816293-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_2f8fe6b6115a7e5ede9984cde9aa6191 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-30 |
| filingDate | 2006-09-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e67247b86c24f1b38d75d29be81c891f http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ea4c60b527a4e1d07b1b1e59dd345ef1 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5152daf1e5a054d75fbee99b59e93d04 |
| publicationDate | 2008-04-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-200816293-A |
| titleOfInvention | Semiconductor device having double vertical multi-layers structure and the method for making the same |
| abstract | The present invention relates to a semiconductor device having double vertical multi-layers structure and the method for making the same. The method comprises the following steps: (a) providing a substrate; (b) forming an opening on the substrate; (c) forming a first insulation layer; (d) partially removing the first insulation layer to form two first spacers; (e) forming a charge storage layer; (f) partially removing the charge storage layer to form two second spacers; (g) forming a second insulation layer; and (h) partially removing the second insulation layer to form two third spacers. Whereby, there is no need to use several different photo-masks, so as to reduce the manufacture time and cost, and raise the yield. |
| priorityDate | 2006-09-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 28.