http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-200811935-A
Outgoing Links
Predicate | Object |
---|---|
assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1a492183be65153abfa7dec00d51c816 |
classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02063 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23G1-103 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23G1-106 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23G1-125 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-302 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-30 |
filingDate | 2007-07-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c470c43d371bcfb45247a186c4dff639 |
publicationDate | 2008-03-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | TW-200811935-A |
titleOfInvention | Method for fabricating a semiconductor device comprising surface cleaning |
abstract | A method for fabricating a semiconductor device including surface cleaning includes forming a gate stack on a semiconductor substrate, cleaning contaminants present on the surface of the semiconductor substrate exposed through a contact hole using an etchant including a fluorine (F)-containing species dispersed in an alcohol, and filling a contact hole with a conductive layer to form a connection contact. The etchant preferably has a low selectivity of l or less. |
priorityDate | 2006-08-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 64.