| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_bc905cbef116a1ec61d12125af9427f3 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B25-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0254
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02647
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-403
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0237
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02639
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B25-18 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205 |
| filingDate |
2006-08-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_46ac6a6abcdf205ee6c8762130a2deeb
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_201dcf0486a6503bd17687c8f62fffa8 |
| publicationDate |
2008-03-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-200811924-A |
| titleOfInvention |
Nitride semiconductor and method for forming the same |
| abstract |
A method for forming a nitride semiconductor substrate is provided. The method comprises steps of providing a substrate and performing a surface treatment process to rough a portion of the surface of the substrate. Then, a nitride semiconductor layer is formed over the substrate. The nitride semiconductor layer is selectively and regionally formed on the non-roughed surface of the substrate so that a portion of the penetrating dislocations in the nitride semiconductor layer is blocked and the density of the penetrating dislocation in the nitride semiconductor layer is decreased. |
| priorityDate |
2006-08-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |