http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-200810132-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_73a22eaa7a8147cc7e4752a2d5bfbb34 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-788 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-115 |
| filingDate | 2007-07-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2314db210db76778fb8930846cfc9eda http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cdfcc7e54b6265e3cf7f827452f0d86d http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_153497e3a6b8964fbcb339c7058e94f1 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fc1a7eba2995592b0e79f4ba80214301 |
| publicationDate | 2008-02-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-200810132-A |
| titleOfInvention | Non-volatile memory and operating method thereof |
| abstract | A non-volatile memory disposed in the silicon on insulation substrate is provided. The non-volatile memory has a memory cell and a first conductive type doped region. The memory cell has a gate, a charge storage structure, a bottom dielectric layer, a second conductive type drain region and a second conductive type source region. The gate is disposed on the silicon on insulation substrate. The charge storage structure is disposed between the gate and the silicon on insulation substrate. The bottom dielectric layer is disposed between the charge storage layer and the silicon on insulation substrate. The second conductive type drain region and the second conductive type source region are disposed in a first conductive type silicon body layer next to the two sides of the gate. The first conductive type doped region is disposed in the first conductive type silicon body layer and electrically connected to the first conductive type silicon body layer beneath the gate. |
| priorityDate | 2006-08-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 33.