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filingDate 2007-06-12-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d77bfaecfe500af307861151e35a7f95
publicationDate 2008-02-16-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber TW-200810084-A
titleOfInvention Fuse with silicon nitride removed from fuse surface in cutting region
abstract A fuse is formed by a borderless contact process that removes the silicon nitride layer above the cutting region of the fuse. The fuse is formed on a semiconductor substrate, and comprises an insulation layer such as an oxide layer formed on the substrate, a fuse layer formed on the insulation layer, where the fuse layer includes at least a first region and a second region, and a silicon nitride layer formed only above the first region of the fuse layer. The first region of the fuse layer is where contact holes are formed for applying electrical stress to the fuse, and the second region of the fuse layer is where the fuse is cut in response to electrical stress applied to the fuse. Because the silicon nitride layer is removed above the second region of the fuse layer, the silicon nitride layer does not inhibit the cutting of the fuse in response to electrical stress applied to the fuse.
priorityDate 2006-06-27-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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