http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-200810083-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_a193bbf98a93a588ed793bc48b9a7d3f |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-5256 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-04 |
| filingDate | 2007-06-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cbe8f4d78d07b38c12449f4c36521457 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3c50f93a2ee63faeb757c494839cfe7b |
| publicationDate | 2008-02-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-200810083-A |
| titleOfInvention | A semiconductor fuse structure and a method of manufacturing a semiconductor fuse structure |
| abstract | The invention relates to a semiconductor fuse structure comprising a substrate (1) having a surface, the substrate (1) having a field oxide region (3) at the surface, the fuse structure further comprising a fuse body (FB), the fuse body (FB) comprising polysilicon (PLY), the fuse body (FB) lying over the field oxide region (3) and extending into a current-flow direction (CF), wherein the fuse structure is programmable by means of leading a current through the fuse body (FB), wherein the fuse body (FB) has a tensile strain in the current-flow direction (CF) and a compressive strain in a direction (Z) perpendicular to said surface of the substrate (1). The invention further relates to methods of manufacturing such a semiconductor fuse. |
| priorityDate | 2006-06-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 23.