http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-200809968-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_43941a99b5523317eff0d47b77e6d781 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7843 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823807 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67115 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76829 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76831 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-2686 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76825 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76834 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3105 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-31 |
| filingDate | 2007-08-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2045fa4058590ec64369fe611e2a43d0 |
| publicationDate | 2008-02-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-200809968-A |
| titleOfInvention | Apparatus and method for manufacturing semiconductor |
| abstract | The purpose of the present invention is to prevent the increase of a dielectric constant of a low-k film. The present invention comprises: HMDSO gas-supplying pipe 1021; Si(CH<3>)<3>OCH3 gas-supplying pipe 1022; CH3OH gas-supplying pipe 1023; NF3 gas-supplying pipe 1024; N2 gas-supplying pipe 1025; He gas-supplying pipe 1026; Ar gas-supplying pipe 1027; O2 gas-supplying pipe 1028; N2O gas-supplying pipe 1029; valve 1032 and mass flow meter 1031 connected to each supplying pipe 1021~1029; a pair of upper electrode 1061 and bottom electrode 1062; 13.56MHz oscillator 1063 and 380 kHz oscillator 1064 connected to each electrode 1061, 1062; aluminum plate 1065 installed above the plasma-processing chamber; aluminum oxide insulator 1066 installed near the upper electrode 1061; the gas-exhaust valve 1014 to exhaust the gas in the plasma-processing chamber; and gas-exhaust pump 1015 connected to the gas-exhaust valve 1014.to prevent the increase of a dielectric constant of a low-k film |
| priorityDate | 2006-08-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 31.