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publicationDate 2008-02-01-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber TW-200807549-A
titleOfInvention Edge gas injection for critical dimension uniformity improvement
abstract A method of etching a semiconductor substrate with improved critical dimension uniformity comprises supporting a semiconductor substrate on a substrate support in an inductively coupled plasma etch chamber; supplying a first etch gas to a central region over the semiconductor substrate; supplying a second gas comprising at least one silicon containing gas to a peripheral region over the semiconductor substrate surrounding the central region, wherein a concentration of silicon in the second gas is greater than a concentration of silicon in the first etch gas; generating plasma from the first etch gas and second gas; and plasma etching an exposed surface of the semiconductor substrate.
priorityDate 2006-06-20-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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