http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-200807508-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d80f1040809503e54509c871ba828f75 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-324 |
| filingDate | 2007-05-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5d96c588bde5c758253be5261ff9912b http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_43574a8a7080fea968d62f112702bdab |
| publicationDate | 2008-02-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-200807508-A |
| titleOfInvention | In-situ formation of oxidized aluminum nitride films |
| abstract | A method is provided for in-situ formation of a thin oxidized A1N film on a substrate. The method includes providing the substrate in a process chamber, depositing an A1N film on the substrate, and post-treating the A1N film with exposure to a nitrogen- and oxygen-containing gas. The post-treating increases the dielectric constant of the A1N film with substantially no increase in the A1N film thickness. The method can also include pre-treating the substrate prior to A1N deposition, post-annealing the post-treated A1Nfilm, or both. |
| priorityDate | 2006-05-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 29.