| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_438312df8a4ebd3fa8c445da07cb72aa
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6c8d4dc7bd1a30d8fda907fceaeb4e69
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_faf522b8b83eded745c73018576219ba |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02631
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02403
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B23-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B23-025
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-0617
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-403
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02658
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0243
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02433
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02458
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0254
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-0026 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-00 |
| filingDate |
2007-03-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8881b6bc1c3a616fe7c6926f1d4a7feb
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2071211225950d95f75ffffa59d64aff
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_96835dbfa9865cd17dc4743000123d22
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_187ef209c106010f6f36e31b02ca57a4
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3a2f863972661f340eb69b3fe8efb45d |
| publicationDate |
2008-01-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-200805455-A |
| titleOfInvention |
Group III-V nitride layer and method for producing the same |
| abstract |
A hexagonal system group III-V nitride layer having high quality crystallinity capable of enhancing the characteristics of a semiconductor device such as a light emitting element. The group III-V nitride layer belonging to hexagonal system formed by growing on a substrate having a different lattice constant has a growth face orientation of {1-100}, wherein the full width at half maximum b1 of angle dependency of X ray diffraction strength on a {1-210} face normal to the growth face orientation upon X ray incident from a direction parallel with the growth face satisfies a relation 0.01 DEG ≤ b1 ≤ 0.5 DEG , or the full width at half maximum b2 of angle dependency of X ray diffraction strength on a {0001} face upon X ray incident from a direction parallel with the growth face satisfies a relation 0.01 DEG ≤ b2 ≤ 0.5 DEG . |
| priorityDate |
2006-03-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |