http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-200803165-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_12be64ba05e1903129f135be79a9f2e5 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H03H3-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H03H9-56 |
| filingDate | 2006-06-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1e729d03210f05bd15a6fee260192f96 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_18d1d000f5561a296242e625619dc225 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_32b82364ac151e49abdd62bf663aeda6 |
| publicationDate | 2008-01-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-200803165-A |
| titleOfInvention | Ladder type thin film bulk acoustic wave filters |
| abstract | The present invention discloses a ladder type thin film bulk acoustic filter, comprising a substrate, used for supporting the ladder type thin film bulk acoustic filter; a bottom electrode, deposited and patterned on the substrate; a piezoelectric layer, deposited and patterned on the bottom electrode and a top electrode,deposited and patterned on the piezoelectric layer. By tuning the overlap area between the bottom and top electrodes, the impedance value of thin film bulk acoustic ladder filters can be controllable. The disclosed thin film bulk acoustic ladder filter according to the invention can control the slope of the passband edge and enhance the selectivity. |
| priorityDate | 2006-06-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 44.