Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_424db9d56b06a23aed410fcf5df652f3 |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0757 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S430-115 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S430-108 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S430-106 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S430-122 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S430-12 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-094 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-11 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0752 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-075 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-038 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-26 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027 |
filingDate |
2006-11-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3a727bc2adef7c088b52170c16eb5a93 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4856861c3aa0e9c958f966e2283bfc54 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b4f04400920727cf56f01b5702ae1a91 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4c35dc31e0f008513854fb397a72146b |
publicationDate |
2007-09-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
TW-200732845-A |
titleOfInvention |
Silicon-containing film forming composition, silicon-containing film serving as etching mask, substrate processing intermediate, and substrate processing method |
abstract |
A multilayer resist process comprises forming in sequence an undercoat film, an intermediate film, and a photoresist film on a patternable substrate, and effecting etching in multiple stages. A silicon-containing film forming composition is useful in forming the intermediate film serving as an etching mask, comprising a silicon-containing polymer obtained through hydrolytic condensation of at least one Si-Si bond-containing silane compound having formula: R(6-m)Si2Xm wherein R is a monovalent hydrocarbon group, X is alkoxy, alkanoyloxy or halogen, and m is 3 to 6. The composition allows the overlying photoresist film to be patterned to a satisfactory profile and has a high etching selectivity relative to organic materials. |
priorityDate |
2005-11-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |