http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-200732845-A

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filingDate 2006-11-21-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3a727bc2adef7c088b52170c16eb5a93
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publicationDate 2007-09-01-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber TW-200732845-A
titleOfInvention Silicon-containing film forming composition, silicon-containing film serving as etching mask, substrate processing intermediate, and substrate processing method
abstract A multilayer resist process comprises forming in sequence an undercoat film, an intermediate film, and a photoresist film on a patternable substrate, and effecting etching in multiple stages. A silicon-containing film forming composition is useful in forming the intermediate film serving as an etching mask, comprising a silicon-containing polymer obtained through hydrolytic condensation of at least one Si-Si bond-containing silane compound having formula: R(6-m)Si2Xm wherein R is a monovalent hydrocarbon group, X is alkoxy, alkanoyloxy or halogen, and m is 3 to 6. The composition allows the overlying photoresist film to be patterned to a satisfactory profile and has a high etching selectivity relative to organic materials.
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Total number of triples: 27.