http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-200723445-A

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publicationDate 2007-06-16-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber TW-200723445-A
titleOfInvention Technique for forming interconnect structures with reduced electro and stress migration and/or resistivity
abstract By improving the purity of metal lines and the crystalline structure, tile overall performance of metal lines, especially of highly scaled copper-based semiconductor devices, may be enhanced. The modification of the crystalline structure of the metal lines may be performed by a heat treatment generating locally restricted heating zones, which are scanned along the length direction of the metal lines, and/or a heat treatment comprising a heating step in a vacuum ambient followed by a heating step in a reducing ambient.
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Total number of triples: 21.