| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_bce787970b69aeb08d159e7c101c9ed7 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76864
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76843
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76877
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76873 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-30 |
| filingDate |
2006-08-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2df874194d9a583c0f3b5db1f7d9f002
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_610df2447f9c02ca8b1b5c8a13a7bcf6
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_66ff837398591cb2ca646971db6c0ceb
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e9ec0b055d14dd615324a182a5944f21
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8dc0f790a1e4563581787c6f64e35734
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_596796b82de6d54c17bef065ef3159a9
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_60d76e607607a1a1c4cb3f9da947012b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c4d8d0b7281897b52e7b29e924d76b1a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_66961cf1f8f78a1f1cb0587401e48b54
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9798d177aced7987e0a45dba1d3984f8 |
| publicationDate |
2007-03-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-200710975-A |
| titleOfInvention |
Copper barrier reflow process employing high speed optical annealing |
| abstract |
A method of forming a barrier layer for a thin film structure on a semiconductor substrate includes forming high aspect ratio openings in a base layer having vertical side walls, depositing a dielectric barrier layer comprising a dielectric compound of a barrier metal on the surfaces of the high aspect ratio openings including the vertical side walls and depositing a metal barrier layer comprising the barrier metal on the first barrier layer. The method further includes reflowing the metal barrier layer by (a) directing light from an array of continuous wave lasers into a line of light extending at least partially across the thin film structure, and (b) translating the line of light relative to the thin film structure in a direction transverse to the line of light. |
| priorityDate |
2005-08-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |