| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_35f1bf7625ec038f633e972977ad7a70
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c1755eede76ea7e719a3e0d2843cd793 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-509
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B25-105
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0242
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-50
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-34
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-303
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-403
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0254
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-52
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0237
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0262 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205 |
| filingDate |
2006-08-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4427b24855a08496db46c8b71676cd62
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_73e0f4072dfd5b79c2e50f96e0b935e8
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cd4e850bf507abb4331a2be6befe2e53 |
| publicationDate |
2007-03-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-200709281-A |
| titleOfInvention |
Method for forming film of group iii nitride such as gallium nitride |
| abstract |
To form a film of a group III nitride such as GaN by using atmospheric plasma. A reactor chamber (12) is filled with pure nitrogen under a substantially atmospheric pressure of approximately 40kPa. A c-plane sapphire substrate (90) is placed on an electrode (14). The substrate temperature is increased to 650 DEG C by a heater (15). An electric field is applied between the electrodes (13, 14) to form a discharge space (11a). A small quantity of trimethyl gallium is added to N2 in a gas supply system (20), and the N2 is fed to the discharge space (11a) and brought into contact with the sapphire substrate (90). A ratio of V/III is permitted to be 10-100,000 on the substrate (90). |
| priorityDate |
2005-08-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |