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publicationDate 2007-02-16-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber TW-200707641-A
titleOfInvention Technique for forming copper-containing lines embedded in a low-k dielectric by providing a stiffening layer
abstract By providing a stiffening layer at three sidewalls of a trench to be filled with a copper-containing metal, the reduced thermomechanical confinement of a low-k material may be compensated for, at least to a certain degree, thereby reducing electromigration effects and hence increasing lifetime of sophisticated semiconductor devices having metallization layers including low-k dielectric materials in combination with copper-based metal lines.
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