http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-200704828-A

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classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23F1-44
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23F1-16
filingDate 2006-03-27-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_902a60094b29a49cde85aa6f1ea5d437
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8239faf348e56d42f35aba5ba3e462f9
publicationDate 2007-02-01-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber TW-200704828-A
titleOfInvention Selective wet etching of metal nitrides
abstract In one embodiment, the present invention relates to a wet etching composition including hydrogen peroxide; an organic onium hydroxide; and an acid. In another embodiment, the invention relates to a method of wet etching metal nitride selectively to surrounding structures comprising one or more of silicon, silicon oxides, glass, PSG, BPSG, BSG, silicon oxynitride, silicon nitride and silicon oxycarbide and combinations and mixtures thereof and/or photoresist materials, including steps of providing a wet etching composition including hydrogen peroxide, an organic onium hydroxide, and an organic acid; and exposing a metal nitride to be etched with the wet etching composition for a time and at a temperature effective to etch the metal nitride selectively to the surrounding structures.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9831088-B2
priorityDate 2005-04-08-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 31.