http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-200639241-A

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assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_64ce9e67b090644ea50f977c57776a34
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classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-304
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09K3-14
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B24B37-00
filingDate 2005-05-11-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_605892885a651799d15144e69f408008
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c5eb1c0b7c643981261b73beb12c0a10
publicationDate 2006-11-16-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber TW-200639241-A
titleOfInvention Composite for polishing copper wiring, method of polishing surface of semiconductor integrated circuit, and method of manufacturing copper wiring for semiconductor integrated circuit
abstract To provide a technology for realizing a very precise surface flatness when using copper for a metal for wiring. A composite for polishing contains a chemical compound which contains water and hydrogen peroxide and has a chemical construction expressed by a formula (1), at least one first chelating agent selected among a group of tatraric acid, malonic acid, malic acid, citric acid, maleic acid, and fumaric acid, and at least one second chelating agent selected from among a group of triethylenetetramine, ethylenediaminediacetic acid, ethylenediaminetetraacetic acid, and their derivatives. In the formula (1), R is a hydrogen atom, an alkyl group including 1 to 4 carbon atoms, an alkoxyl group including 1 to 4 carbon atoms, or a carboxylic acid group.
priorityDate 2003-11-13-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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