http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-200636916-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c5520dd38cc403678d9f91e0b0ee95fb |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2221-1089 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-52 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-285 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76843 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76807 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76873 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76879 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3205 |
| filingDate | 2006-03-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_29215823fc9a6502911de7cd1aec596c |
| publicationDate | 2006-10-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-200636916-A |
| titleOfInvention | Semiconductor device and its manufacturing method thereof |
| abstract | The present invention provides a semiconductor device having a copper wiring with high electromigration resistance. Disclosed is a semiconductor device having a wiring layer which is formed by such a process wherein a groove or pore is formed in an insulating film formed on a substrate; a barrier layer is then formed on the substrate; a copper seed layer is formed on the barrier layer; a copper plating layer is formed by electrolytic plating using the copper seed layer, and then by removing the copper plating layer and the copper seed layer on the surface. The copper seed layer is composed of a plurality of layers including a small grain layer and a large grain layer having different crystal grain sizes, and the small grain layer is in contact with the barrier layer. |
| priorityDate | 2005-03-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
| Predicate | Subject |
|---|---|
| isDiscussedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID418354341 http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID23978 |
Total number of triples: 22.