http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-200618184-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_4edd4e526605dbd18b513b4b30d19ab2 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-8611 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-82 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H02M3-28 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H02M7-219 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-82 |
| filingDate | 2005-09-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0e6e8e247a2ecfbc6d764261a6654f44 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bda3c12827b4be813422f516bd6e5152 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cd72f87a4141e2f94f0ba0e84f5d1c98 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5f9448563e9d95545047f87a51285b46 |
| publicationDate | 2006-06-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-200618184-A |
| titleOfInvention | Semiconductor device, full wave rectifier circuit, and half wave rectifier circuit |
| abstract | This invention provides a semiconductor device capable of preventing a useless current from leaking to a semiconductor substrate when a current flows in a forward direction through a diode. An N type well region (32) is formed on the surface of a P type semiconductor substrate (31), and a P type well region (33) is formed in the N type well region (32). An N+ type diffusion layer (34) is formed on the surface of the N type well region (32) outside the P type well region (33). On the surface of the P type region (33), a P+ type diffusion layer (35) and an N+ type diffusion layer (36) are formed. The N+ type diffusion layer (34) formed on the surface of the N type well region (32) and the N+ type diffusion layer (35) formed on the surface of the N type well region (33) are electrically connected by a wiring (37) made of aluminum, and an anode electrode (38) is connected to the wiring (37). A cathode electrode (39) is connected to the N+ type diffusion layer (36). |
| priorityDate | 2004-09-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
| Predicate | Subject |
|---|---|
| isDiscussedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419491804 http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID5359268 |
Total number of triples: 20.