Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_89afae566b725ae78e20cf972d9bcdc7 |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-2041 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08F20-10 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-11 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08F22-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08F232-08 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08F220-1811 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08F220-283 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08F20-10 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08F22-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08F220-18 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-11 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08F220-28 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08F232-08 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08F36-16 |
filingDate |
2005-04-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8b61fb1219b6bedfe5ba0f57f6bbdbd6 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_104f8a4efa34b5013135a0ce16f7edb5 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_23c43aa3fe55d690d955960d87a560cc http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e8c71d33c77b0cfbfdbf78e05c311a43 |
publicationDate |
2006-02-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
TW-200606179-A |
titleOfInvention |
Material for forming resist protection film for liquid immersion lithography and method for forming resist pattern by using the protection film |
abstract |
Said invention prevents the deterioration of a resist film and the deterioration of an immersion liquid at the same time in the liquid immersion lithography using various immersion liquids including water without increasing the number of processing steps and enabling the formation of a high-resolution resist pattern in a liquid immersion lithography, especially a lithographic process to improve the resolution of a resist pattern by placing a liquid layer having a prescribed thickness and a refractive index higher than that of air and lower than that of the resist film at least on the resist film in the pathway of the lithographic exposure light to the resist film. A protection film essentially free from compatibility with a liquid for immersing a resist film, especially water and soluble in an alkali is formed on the surface of the resist film to be used in the liquid immersion lithography. |
priorityDate |
2004-04-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |