| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_b809e16fc8e6cf409abc8b3376cda1d2 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C16-0458
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y10-00 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66825
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42328
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B41-30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42336
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7883
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B69-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C16-00 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C16-04 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8247
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-788
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-115
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-423 |
| filingDate |
2004-12-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f337fc9a15ce3c75b508634b0bb18b2d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fae89a8904582f09ff789720e765351e |
| publicationDate |
2005-12-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-200541081-A |
| titleOfInvention |
Pillar cell flash memory thchnology |
| abstract |
An array of a pillar-type nonvolatile memory cells (803) has each memory cell isolated from adjacent memory cells by a trench (810). Each memory cell is formed by a stacking process layers on a substrate: tunnel oxide layer (815), polysilicon floating gate layer (819), ONO or oxide layer (822), polysilicon control gate layer (825). Many aspects of the process are self-aligned. An array of these memory cells will require less segmentation. Furthermore, the memory cell has enhanced programming characteristics because electrons are directed at a normal or nearly normal angle (843) to the floating gate (819). |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I781421-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I753556-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11476252-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I702604-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I727690-B |
| priorityDate |
2003-12-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |