| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d80f1040809503e54509c871ba828f75 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J2237-2001 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67109
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-687
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-683 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23F1-00 |
| filingDate |
2005-03-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_df8d4b9d8f1925ff689d409c808fb907
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4a98876af6c745370e4ee10c8ef6baca
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0a2e5f740ccb60abdffe52be720174b0
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e4270467ee73e9f9ebb3457374e4fd00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d8676387a45ffad7ebc43c6b9a70b84a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5d96c588bde5c758253be5261ff9912b |
| publicationDate |
2005-12-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-200540937-A |
| titleOfInvention |
Wafer heater assembly |
| abstract |
A wafer heating assembly is described having a unique heater element for use in a single wafer processing systems. The heating unit includes a carbon wire element encased in a quartz sheath. The heating unit is as contamination-free as the quartz, which permits direct contact to the wafer. The mechanical flexibility of the carbon 'wire' or 'braided' structure permits a coil configuration, which permits independent heater zone control across the wafer. The multiple independent heater zones across the wafer can permit temperature gradients to adjust film growth/deposition uniformity and rapid thermal adjustments with film uniformity superior to conventional single wafer systems and with minimum to no wafer warping. The low thermal mass permits a fast thermal response that enables a pulsed or digital thermal process that results in layer-by-layer film formation for improved thin film control. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10006717-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9957616-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I613316-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I595562-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I654498-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I484561-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I446969-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I702320-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11204200-B2 |
| priorityDate |
2004-03-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |