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filingDate 2004-12-17-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_824fdc8fb912da20bcbc13f4cb156fbd
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publicationDate 2005-12-01-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber TW-200539335-A
titleOfInvention Torque-based end point detection methods for chemical mechanical polishing tool which uses ceria-based CMP slurry to polish to protective pad layer
abstract A chemical mechanical polishing (CMP) method is disclosed in which a torque-based end-point algorithm is used to determine when polishing should be stopped. The end-point algorithm is applicable to situations where a ceria (CeO2) based CMP slurry is used for further polishing, pre-patterned and pre-polished workpieces (e.g., HDP-oxide) and a comparatively, lower friction and underlying layer of sacrificial pads (e.g., silicon nitride pads). A mass production wise, reliable and consistent signature point in the friction versus time waveform of a torque-representing signal is found and used to trigger an empirically specified duration of overpolish. A database maybe used to define the overpolish time as a function of one or more relevant parameters.
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