| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_51d028c578ae85cb937b5b34a5129fbc |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28229
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-517
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-513 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823842
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-82345
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28229
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-092
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-513
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-517
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66545 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8234
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8238 |
| filingDate |
2005-04-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d5b67e2da97fd009230a32fc81892613
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5e09485f7c1907393b48938dc7b6d297
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6dcc9e402148133048ff83796112700c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2ef21934ad3d570854f3186f7521be6d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_01256746433fa298de5e1db9f79f600b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8337ce723fb5641b696ac5b3ca888f87
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ea8caeee802de36aff26b80cbe4103cd
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_499bdc73887134be7f3461f9690b6f51
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_460a7c1582ef5f582d1a700612e7b8f1 |
| publicationDate |
2005-12-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-200539277-A |
| titleOfInvention |
A method for making a semiconductor device having a high-k gate dielectric layer and a metal gate electrode |
| abstract |
A method for making a semiconductor device is described. That method comprises forming a first dielectric layer on a substrate, then forming a trench within the first dielectric layer. After forming a second dielectric layer on the substrate, a first metal layer is formed within the trench on a first part of the second dielectric layer. A second metal layer is then formed on the first metal layer and on a second part of the second dielectric layer. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9281374-B2 |
| priorityDate |
2004-04-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |