http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-200538580-A
Outgoing Links
Predicate | Object |
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assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_0838e811d9a8114984c3d3613579f5e7 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C18-02 |
filingDate | 2004-05-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f9895dfdd58964610502fcfb7d3b7ece |
publicationDate | 2005-12-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | TW-200538580-A |
titleOfInvention | Preparation method of semiconductor electrothermic film |
abstract | A preparation method of a semiconductor electrothermic film, at least includes: using tin, vanadium chloride and silicide as a main body, followed by adding compounds such as iron, antimony, indium, etc as dopant with specific weight of 0.01 ~ 1% during the preparation process, uniformly mixing the aforementioned material and mixing the medium based on the predetermined ratio to prepare the raw material with specific weight of 10 ~ 30%, uniformly mixing the above-mentioned raw materials and then adding in a bit of inorganic acid as a medium to react with the main body with redox reaction; and the base material is subject to cleaning by ultrasonic wave and then pure water, placing the substrate into a high-temperature oven for slow heating, according to the heating pattern of stream line, until the substrate surface achieving to its transformation point, and then allowing the present invention flow through a sprinkle-nozzle prepared by acid-alkaline resistant non-iron materials; and nebulization charged particles into mist under a high temperature to deposit them on the substrate. |
priorityDate | 2004-05-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 35.