http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-200532854-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_f5d84b718722b130234fa19beca531b6 http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_9019c0ce5cb7b82c85e121f6cac86dce |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K10-491 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K10-468 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-05 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-00 |
| filingDate | 2005-01-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_eec907332df5094e7743263caaae7297 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_53cebfda8285ebf30d6069e3cb85f586 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_526db0d85081e506aa7f4cc356e16e01 |
| publicationDate | 2005-10-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-200532854-A |
| titleOfInvention | Organic vertical transistor and process for fabricating the same |
| abstract | The present invention provides an organic vertical transistor in which integration is facilitated and a short channel can be attained while increasing the on current and decreasing the off current, and its fabricating process. The organic vertical transistor comprises: a source electrode formed on a substrate in the vertical direction; an insulating film between the source-drain electrodes formed on the source electrode in the vertical direction; a drain electrode formed on the insulating film between the source-drain electrodes in the vertical direction; an organic semiconductor active layer so formed on the substrate in the horizontal direction that the opposite sides of the source electrode, the insulating film between the source-drain electrodes and the drain electrode are in contact therewith; a gate insulating film stacked in contact with the organic semiconductor active layer; and a gate electrode stacked in contact with the gate insulating film. The gate electrode, the gate insulating film and the organic semiconductor active layer are processed respectively. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I557915-B http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8258554-B2 |
| priorityDate | 2004-03-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 39.