| abstract |
A manufacturing method for a magnetoresistive element is provided, in which a single crystal MgO (001) substrate 11 is prepared, an epitaxial Fe (001) lower electrode (the 1st electrode) 17 with 50 nm thickness is grown at room temperature on a MgO (001) seed layer 15, then in a super-high vacuum (2×10<SP>-8</SP>Pa), an anneal process is performed at 350 DEG C. A MgO (001) barrier-layer 21 with 2 nm thickness is epitaxially grown on the Fe (001) lower electrode (the 1st electrode) 17 at room temperature. At this time, an electronic beam evaporation for MgO is used. A Fe (001) upper electrode (the 2nd electrode) 23 with 10 nm thickness is formed at room temperature on a MgO (001) barrier layer 21. Then, a Co layer 25 with 10 nm thickness is deposited on the Fe (001) upper electrode (the 2nd electrode) 23. The Co layer 25 is used to realize an anti-parallel magnetization arrangement by means of increasing the holding force of the upper electrode 23. Then, the above manufactured material is finely processed and an Fe (001)/MgO(001)/Fe(001) TMR element is formed. Thus the output voltage of the MRAM can be increased. |