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filingDate 2005-01-04-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 2005-09-01-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber TW-200529329-A
titleOfInvention Improvements relating to ion implantation
abstract This invention relates to a method of implanting ions in a substrate using an ion beam where instabilities in the ion beam may be present and to an ion implanter for use with such a method. This invention also relates to an ion source for generating an ion beam that can switched off rapidly. In essence, the invention provides a method of implanting ions comprising switching off the ion beam when an instability has been detected whilst continuing motion of the substrate relative to the ion beam to leave an unimplanted portion of a scan line across the substrate, establishing a stable ion beam once more and finishing the scan line by implanting the unimplanted portion of the path.
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