| abstract |
The subject of the invention is to provide a resist under-layer film material which functions as an excellent antireflection film, in particular, for exposure to light at short wavelength, that is, which has high transparency and the optimum n and k values, and which has excellent etching durability during processing a substrate, in a resist under-layer film material for a multilayer resist process, in particular, for a two-layer resist process, and to provide a method for forming a pattern on a substrate by using the above material and by lithography. The resist under-layer film material for a multilayer resist film to be used for lithography contains at least a polymer having a repeating unit expressed by general formula (1). |