| abstract |
This invention provides a technology for realizing an electric test for a semiconductor integrated circuit device having a narrow-pitched test pad. Part of metallic films 21A, 21B, in which a rhodium film and a nickel film are sequentially laminated, functions as 4-pyramid type or 4-prismoid type probes 7A, 7B. A wiring 23 and the metallic films 21A, 21B are connected electrically through a through hole 24 formed on a polyimide film among the wiring 23, metallic films 21A to 21B. A flat pattern of the metallic film 21B with the probe 7B formed therein along with the through hole 24, is the same one obtained by turning the flat pattern of the metallic film 21A, on which the probe 7A is formed, along with the through hole 24, by 180 DEG. |