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publicationDate 2005-07-16-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber TW-200524132-A
titleOfInvention Method of forming thin-film transistor devices with electro-static discharge protection
abstract A silicon layer is formed on a substrate, and then the silicon layer is patterned and source regions, drain regions and connectors with all the same conductivity are formed. The source regions are connected with the drain regions electrically by the connectors, and short circuits are thus constructed. Then, following procedures of thin film transistor manufacture are performed in turn. Finally, when the source/drain metal is patterned to form data lines, the connectors are cut off by etching as the source/drain metal is etched.
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