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filingDate 2004-11-01-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f3cc2ab965da50c8813674901fe55258
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publicationDate 2005-07-16-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber TW-200524078-A
titleOfInvention Electroplated CoWP composite structures as copper barrier layers
abstract A composite material comprising a layer containing copper, and an electrodeposited CoWP film on the copper layer. The CoWP film contains from 11 atom percent to 25 atom percent phosphorus and has a thickness from 5 nm to 200 nm. The invention is also directed to a method of making an interconnect structure comprising: providing a trench or via within a dielectric material, and a conducting metal containing copper within the trench or the via; and forming a CoWP film by electrodeposition on the copper layer. The CoWP film contains from 10 atom percent 25 atom percent phosphorus and has a thickness from 5 nm to 200 nm. The invention is also directed to a interconnect structure comprising a dielectric layer in contact with a metal layer; an electrodeposited CoWP film on the metal layer, and a copper layer on the CoWP film.
priorityDate 2003-11-18-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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